 |  |  | |
| PartNumber | 2SK3666-3-TB-E | 2SK3666-2-TB-E | 2SK3666-3-TB-E (SANYO) |
| Description | JFET SWITCHING DEVICE | JFET SWITCHING DEVICE | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | JFET | JFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-59-3 | SOT-23-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Vgs Gate Source Breakdown Voltage | - 30 V | - | - |
| Drain Source Current at Vgs=0 | 3 mA | - | - |
| Id Continuous Drain Current | 10 mA | 1.5 mA | - |
| Rds On Drain Source Resistance | 200 Ohms | 200 Ohms | - |
| Pd Power Dissipation | 200 mW | 200 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SK3666 | 2SK3666 | - |
| Packaging | Reel | Reel | - |
| Type | JFET | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 3 ms | - | - |
| Gate Source Cutoff Voltage | - 1 nA | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Technology | - | Si | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Product Type | - | JFETs | - |
| Subcategory | - | Transistors | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| 2SK3666-3-TB-E | JFET SWITCHING DEVICE | ||
| 2SK3666-2-TB-E | JFET SWITCHING DEVICE | ||
| 2SK3666-3-TB-E (SANYO) | New and Original | ||
ON Semiconductor |
2SK3666-4-TB-E | JFET NCH J-FET | |
| 2SK3666-3-TB-E | New and Original | ||
| 2SK3666-2-TB-E | JFET NCH 30V 200MW 3CP | ||
| 2SK3666-4-TB-E | JFET N-CH 30V 0.2W CP |