30C02C

30C02CH-TL-E vs 30C02CH vs 30C02CHTLE

 
PartNumber30C02CH-TL-E30C02CH30C02CHTLE
DescriptionBipolar Transistors - BJT BIP NPN 0.7A 30V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.85 V--
Maximum DC Collector Current1.4 A--
Gain Bandwidth Product fT540 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series30C02CH--
DC Current Gain hFE Max800--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current700 mA--
DC Collector/Base Gain hfe Min300--
Pd Power Dissipation700 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
30C02CH-TL-E Bipolar Transistors - BJT BIP NPN 0.7A 30V
30C02CH New and Original
30C02CHTLE New and Original
ON Semiconductor
ON Semiconductor
30C02CH-TL-E Bipolar Transistors - BJT BIP NPN 0.7A 30V
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