A1P2

A1P25S12M3 vs A1P25S12M3-F

 
PartNumberA1P25S12M3A1P25S12M3-F
DescriptionIGBT Modules PTD HIGH VOLTAGEIGBT Modules PTD HIGH VOLTAGE
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT ModulesIGBT Modules
RoHSYY
TechnologySiSi
ProductIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationSixpackSixpack
Collector Emitter Voltage VCEO Max1200 V1200 V
Collector Emitter Saturation Voltage1.95 V1.95 V
Continuous Collector Current at 25 C25 A25 A
Gate Emitter Leakage Current500 nA500 nA
Pd Power Dissipation197 W197 W
Package / CaseACEPACK1ACEPACK1
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesA1P25S12M3A1P25S12M3-F
BrandSTMicroelectronicsSTMicroelectronics
Mounting StyleThrough HolePress Fit
Maximum Gate Emitter Voltage20 V20 V
Product TypeIGBT ModulesIGBT Modules
Factory Pack Quantity1818
SubcategoryIGBTsIGBTs
TradenameACEPACKACEPACK
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
A1P25S12M3 IGBT Modules PTD HIGH VOLTAGE
A1P25S12M3-F IGBT Modules PTD HIGH VOLTAGE
A1P25S12M3 IGBT TRENCH 1200V 25A ACEPACK1
A1P25S12M3-F IGBT TRENCH 1200V 25A ACEPACK1
A1P2 New and Original
A1P20 New and Original
A1P20/A11A New and Original
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