PartNumber | A2C25S12M3 | A2C25S12M3-F |
Description | IGBT Modules PTD HIGH VOLTAGE | IGBT Modules PTD HIGH VOLTAGE |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Modules | IGBT Modules |
RoHS | Y | Y |
Technology | Si | Si |
Product | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Converter Inverter Brake | Converter Inverter Brake |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 1.95 V | 1.95 V |
Continuous Collector Current at 25 C | 25 A | 25 A |
Gate Emitter Leakage Current | 500 nA | 500 nA |
Pd Power Dissipation | 197 W | 197 W |
Package / Case | ACEPACK2 | ACEPACK2 |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | A2C25S12M3 | A2C25S12M3-F |
Brand | STMicroelectronics | STMicroelectronics |
Mounting Style | Through Hole | Press Fit |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 18 | 18 |
Subcategory | IGBTs | IGBTs |
Tradename | ACEPACK | ACEPACK |