A2T09

A2T09D400-23NR6 vs A2T09VD250NR1 vs A2T09VD300NR1

 
PartNumberA2T09D400-23NR6A2T09VD250NR1A2T09VD300NR1
DescriptionRF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 VRF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 VRF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
ManufacturerNXPNXPNXP
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Transistor PolarityN-Channel--
TechnologySiSiSi
Id Continuous Drain Current2.7 A--
Vds Drain Source Breakdown Voltage- 500 mV, 70 V--
Gain17.9 dB--
Output Power93 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Mounting StyleSMD/SMT--
Package / CaseOM-1230-4L2S-7--
PackagingReelReelReel
Operating Frequency716 MHz to 960 MHz--
TypeRF Power MOSFET--
BrandNXP / FreescaleNXP / FreescaleNXP / Freescale
Number of Channels2 Channel--
Product TypeRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity150500500
SubcategoryMOSFETsMOSFETsMOSFETs
Vgs Gate Source Voltage- 6 V, 10 V--
Vgs th Gate Source Threshold Voltage1.5 V--
Part # Aliases935318726528935320819528935316219528
Unit Weight0.186416 oz0.056054 oz0.056054 oz
RoHS-YY
Moisture Sensitive-YesYes
Manufacturer Part # Description RFQ
NXP / Freescale
NXP / Freescale
A2T09D400-23NR6 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
A2T09VD250NR1 RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
A2T09VD300NR1 RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
NXP Semiconductors
NXP Semiconductors
A2T09D400-23NR6 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG, 28 V
A2T09VD300NR1 RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
A2T09VD250NR1 IC TRANS RF LDMOS
A2T09VD250N New and Original
A2T09VD300N New and Original
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