PartNumber | AC857BSQ-7 | AC857BQ-7 | AC857CQ-7 |
Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Dual | Single | Single |
Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - 45 V |
Collector Base Voltage VCBO | - 50 V | - 50 V | - 50 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 400 mV | - 650 mV | - 250 mV |
Maximum DC Collector Current | - 200 mA | - 200 mA | - 100 mA |
Gain Bandwidth Product fT | 100 MHz | 200 MHz | 200 MHz |
Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 475 | 475 | 800 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
Pd Power Dissipation | 200 mW | 350 mW | 350 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | Si |
Package / Case | - | - | SOT-23-3 |
Packaging | - | - | Reel |
DC Collector/Base Gain hfe Min | - | - | 420 |
Unit Weight | - | - | 0.000282 oz |