 |  | | |
| PartNumber | AFGB40T65SQDN | AFGB30T65SQDN | AFGB |
| Description | IGBT Transistors 650V/40A FS4 IGBT | IGBT Transistors 650V/30A FS4 IGBT TO263 A | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-263-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 80 A | - | - |
| Pd Power Dissipation | 238 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Continuous Collector Current Ic Max | 40 A | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | IGBTs | IGBTs | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| AFGB40T65SQDN | IGBT Transistors 650V/40A FS4 IGBT | ||
| AFGB30T65SQDN | IGBT Transistors 650V/30A FS4 IGBT TO263 A | ||
| AFGB | New and Original | ||
ON Semiconductor |
AFGB30T65SQDN | 650V/30A FS4 IGBT TO263 A | |
| AFGB40T65SQDN | 650V/40A FS4 IGBT TO263 A |