PartNumber | AFM907NT1 | AFM906NT1 |
Description | RF MOSFET Transistors RF Power | RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V |
Manufacturer | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | - |
Transistor Polarity | N-Channel | - |
Technology | Si | Si |
Id Continuous Drain Current | 3 A | - |
Vds Drain Source Breakdown Voltage | 30 V | - |
Gain | 15 dB | - |
Output Power | 8 W | - |
Minimum Operating Temperature | - 40 C | - |
Maximum Operating Temperature | + 150 C | - |
Mounting Style | SMD/SMT | - |
Package / Case | DFN-16 | HVSON-16 |
Packaging | Reel | Reel |
Operating Frequency | 136 MHz to 941 MHz | - |
Type | RF Power MOSFET | - |
Brand | NXP Semiconductors | NXP / Freescale |
Forward Transconductance Min | 9.8 S | - |
Number of Channels | 1 Channel | - |
Moisture Sensitive | Yes | Yes |
Pd Power Dissipation | 65.7 W | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V , 12 V | - |
Vgs th Gate Source Threshold Voltage | 1.6 V | - |
Part # Aliases | 935346918515 | 935316322515 |
Unit Weight | 0 oz | 0 oz |
Series | - | AFM906N |