PartNumber | AFT05MS003NT1 | AFT05MS006NT1 | AFT05MS004NT1 |
Description | RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V | RF MOSFET Transistors 136-941 MHz 6 W 7.5V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | N-Channel | - | - |
Technology | Si | Si | Si |
Id Continuous Drain Current | 2.6 A | - | - |
Vds Drain Source Breakdown Voltage | - 500 mV, 30 V | - | - |
Gain | 20.8 dB | - | - |
Output Power | 3.2 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-89-3 | - | - |
Packaging | Reel | Reel | Reel |
Operating Frequency | 1.8 MHz to 941 MHz | - | - |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Number of Channels | 1 Channel | - | - |
Pd Power Dissipation | 30.5 W | - | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
Part # Aliases | 935312585147 | 935311718515 | 935315307147 |
Unit Weight | 0.001792 oz | 0.009877 oz | 0.001792 oz |
Moisture Sensitive | - | Yes | - |