PartNumber | AFT05MS031GNR1 | AFT05MS031NR1 |
Description | RF MOSFET Transistors MV9 UHF 13.6V | RF MOSFET Transistors MV9 UHF 13.6V |
Manufacturer | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | E | E |
Technology | Si | Si |
Vds Drain Source Breakdown Voltage | - 500 mV, 40 V | - 500 mV, 40 V |
Gain | 19 dB | 19 dB |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-270-2 | TO-270-2 |
Packaging | Reel | Reel |
Operating Frequency | 136 MHz to 520 MHz | 136 MHz to 520 MHz |
Series | AFT05MS031N | AFT05MS031N |
Type | RF Power MOSFET | RF Power MOSFET |
Brand | NXP / Freescale | NXP / Freescale |
Moisture Sensitive | Yes | Yes |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 500 | 500 |
Subcategory | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 12 V | - 6 V, 12 V |
Part # Aliases | 935321855528 | 935325665528 |
Unit Weight | 0.019330 oz | 0.018679 oz |
Transistor Polarity | - | N-Channel |
Output Power | - | 33 W |
Minimum Operating Temperature | - | - 40 C |
Maximum Operating Temperature | - | + 150 C |
Configuration | - | Single |
Forward Transconductance Min | - | 5.8 S |
Pd Power Dissipation | - | 294 W |
Vgs th Gate Source Threshold Voltage | - | 2.1 VDC |