PartNumber | ALD110900APAL | ALD1108ESCL | ALD110900ASAL |
Description | MOSFET Dual EPAD(R) N-Ch | MOSFET Quad EPAD(R) Prog | MOSFET Dual EPAD(R) N-Ch |
Manufacturer | Infineon | Advanced Linear Devices | Advanced Linear Devices |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Package / Case | TO-220-3 | SOIC-16 | SOIC-8 |
Number of Channels | 1 Channel | 4 Channel | 2 Channel |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 10 V | 10 V |
Id Continuous Drain Current | 15 A | 12 mA | 12 mA |
Rds On Drain Source Resistance | 240 mOhms | 500 Ohms | 500 Ohms, 500 Ohms |
Vgs Gate Source Voltage | 20 V | 10.6 V | 10.6 V |
Qg Gate Charge | 37 nC | - | - |
Minimum Operating Temperature | - 55 C | 0 C | 0 C |
Maximum Operating Temperature | + 175 C | + 70 C | + 70 C |
Pd Power Dissipation | 128 W | 500 mW (1/2 W) | 500 mW |
Configuration | Single | Quad | Dual |
Channel Mode | Enhancement | Depletion | Depletion |
Tradename | SIPMOS | - | - |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | SPP15P10 | ALD1108ES | ALD110900A |
Transistor Type | 1 P-Channel | 4 N-Channel | 2 N-Channel |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | Advanced Linear Devices | Advanced Linear Devices |
Forward Transconductance Min | 9.3 S | - | - |
Fall Time | 16 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 23 ns | - | - |
Factory Pack Quantity | 500 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | - | 10 ns |
Typical Turn On Delay Time | 9.5 ns | - | 10 ns |
Part # Aliases | SP000683160 SPP15P10PHXKSA1 SPP15P1PHXK | - | - |
Unit Weight | 0.211644 oz | 0.023492 oz | 0.002998 oz |
Product | - | MOSFET Small Signal | MOSFET Small Signal |
Type | - | MOSFET | MOSFET |
Shipping Restrictions | - | - | |
Vgs th Gate Source Threshold Voltage | - | - | 10 mV |