 |  |  | |
| PartNumber | ALD110814PCL | ALD110814SCL | ALD110814 |
| Description | MOSFET Quad EPAD(R) N-Ch | MOSFET Quad EPAD(R) N-Ch | |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | - |
| Product Category | MOSFET | MOSFET | - |
| Shipping Restrictions | - | ||
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | PDIP-16 | SOIC-16 | - |
| Number of Channels | 4 Channel | 4 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 10 V | 10 V | - |
| Id Continuous Drain Current | 12 mA | 12 mA | - |
| Rds On Drain Source Resistance | 500 Ohms | 500 Ohms | - |
| Vgs Gate Source Voltage | 10.6 V | 10.6 V | - |
| Minimum Operating Temperature | 0 C | 0 C | - |
| Maximum Operating Temperature | + 70 C | + 70 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Configuration | Quad | Quad | - |
| Channel Mode | Depletion | Enhancement | - |
| Packaging | Tube | Tube | - |
| Product | MOSFET Small Signal | MOSFET Small Signal | - |
| Series | ALD110814P | ALD110814S | - |
| Transistor Type | 4 N-Channel | 4 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Brand | Advanced Linear Devices | Advanced Linear Devices | - |
| Forward Transconductance Min | 0.0014 S | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 25 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 ns | 10 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 0.036156 oz | 0.023492 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1.38 V | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD110814PCL | MOSFET Quad EPAD(R) N-Ch | |
| ALD110814SCL | MOSFET Quad EPAD(R) N-Ch | ||
| ALD110814 | New and Original |