PartNumber | ALD212900ASAL | ALD212900PAL | ALD212900APAL |
Description | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V |
Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | SOIC-8 | PDIP-8 | PDIP-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 10 V | 10 V | 10 V |
Id Continuous Drain Current | 79 mA | 79 mA | 79 mA |
Rds On Drain Source Resistance | 14 Ohms | 14 Ohms | 14 Ohms |
Vgs th Gate Source Threshold Voltage | 10 mV | 20 mV | 10 mV |
Vgs Gate Source Voltage | 10.6 V | 10.6 V | 10.6 V |
Minimum Operating Temperature | 0 C | 0 C | 0 C |
Maximum Operating Temperature | + 70 C | + 70 C | + 70 C |
Pd Power Dissipation | 500 mW | 500 mW | 500 mW |
Configuration | Dual | Dual | Dual |
Channel Mode | Depletion | Depletion | Depletion |
Packaging | Tube | Tube | Tube |
Series | ALD212900A | ALD212900P | ALD212900A |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Unit Weight | 0.002998 oz | 0.032805 oz | 0.032805 oz |