 |  | | |
| PartNumber | APT100GT120JU2 | APT100GT120JU3 | APT100GT120JRDQ4 |
| Description | IGBT Modules CC0006 | IGBT Modules DOR CC0007 | IGBT Modules FG, IGBT-COMBI,1200V,100A, SOT-227 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Carbide Modules | IGBT Silicon Carbide Modules |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 3.2 V |
| Continuous Collector Current at 25 C | 140 A | 140 A | 123 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 600 nA |
| Pd Power Dissipation | 480 W | 480 W | 570 W |
| Package / Case | SOT-227-4 | ISOTOP-4 | ISOTOP-4 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Height | 9.6 mm | - | - |
| Length | 38.2 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 25.4 mm | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | SMD/SMT | SMD/SMT |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | ISOTOP | - | - |
| Unit Weight | 1.058219 oz | - | - |
| Configuration | - | Single | Single |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT100GT120JU2 | IGBT Modules CC0006 | |
| APT100GT120JU3 | IGBT Modules DOR CC0007 | ||
| APT100GT120JRDQ4 | IGBT Modules FG, IGBT-COMBI,1200V,100A, SOT-227 | ||
| APT100GT120JU2 | IGBT Modules |