PartNumber | APT200GN60J | APT200GN60JDQ4 | APT200GN60B2G |
Description | IGBT Modules FG, IGBT, 600V, 200A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227 | IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHS |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
Continuous Collector Current at 25 C | 283 A | 283 A | - |
Gate Emitter Leakage Current | 600 nA | 600 nA | - |
Pd Power Dissipation | 682 W | 682 W | - |
Package / Case | SOT-227-4 | SOT-227-4 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | Tube |
Height | 9.6 mm | 9.6 mm | - |
Length | 38.2 mm | 38.2 mm | - |
Operating Temperature Range | - 55 C to + 175 C | - 55 C to + 175 C | - |
Width | 25.4 mm | 25.4 mm | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Through Hole |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | ISOTOP | ISOTOP | - |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.340411 oz |
Technology | - | - | Si |