PartNumber | APT26M100JCU2 | APT26F120B2 | APT26F120L |
Description | Discrete Semiconductor Modules Power Module - SiC | MOSFET FG, FREDFET, 1200V, TO-247 T-MAX | MOSFET FG, FREDFET, 1200V, TO-264 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | T-MAX-3 | TO-264-3 |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 1.2 kV | 1.2 kV |
Id Continuous Drain Current | - | 27 A | 27 A |
Rds On Drain Source Resistance | - | 480 mOhms | 480 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 300 nC | 300 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1.135 kW | 1.135 kW |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | POWER MOS 8 | POWER MOS 8 |
Height | - | 5.31 mm | 5.21 mm |
Length | - | 21.46 mm | 26.49 mm |
Width | - | 16.26 mm | 20.5 mm |
Forward Transconductance Min | - | 31 S | 31 S |
Fall Time | - | 48 ns | 48 ns |
Rise Time | - | 31 ns | 31 ns |
Typical Turn Off Delay Time | - | 170 ns | 170 ns |
Typical Turn On Delay Time | - | 50 ns | 50 ns |
Unit Weight | - | - | 0.373904 oz |