PartNumber | APT30SCD120S | APT30SCD65B | APT30SCD120B |
Description | Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER | Schottky Diodes & Rectifiers Schottky Discrete RECTIFIER | Schottky Diodes & Rectifiers |
Manufacturer | Microchip | Microchip | Microsemi Corporation |
Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single |
RoHS | Y | Y | - |
Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | D3PAK | TO-247-2 | - |
If Forward Current | 30 A | 30 A | - |
Vrrm Repetitive Reverse Voltage | 1200 V | 650 V | - |
Vf Forward Voltage | 1.5 V | 1.8 V | - |
Ifsm Forward Surge Current | 330 A | 247 A | - |
Configuration | Single | - | - |
Technology | SiC | SiC | SiC |
Ir Reverse Current | 3000 uA | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Pd Power Dissipation | 291 W | 156 W | - |
Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | - |
Vr Reverse Voltage | 1200 V | 650 V | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Type | - | Silicon Carbide Schottky Diode | - |
Unit Weight | - | 0.229281 oz | - |
Series | - | - | - |
Package Case | - | - | TO-247-2 |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-247 |
Speed | - | - | No Recovery Time > 500mA (Io) |
Diode Type | - | - | Silicon Carbide Schottky |
Current Reverse Leakage Vr | - | - | 600μA @ 1200V |
Voltage Forward Vf Max If | - | - | 1.8V @ 30A |
Voltage DC Reverse Vr Max | - | - | 1200V (1.2kV) |
Current Average Rectified Io | - | - | 99A (DC) |
Reverse Recovery Time trr | - | - | 0ns |
Capacitance Vr F | - | - | 2100pF @ 0V, 1MHz |
Operating Temperature Junction | - | - | -55°C ~ 150°C |
Pd Power Dissipation | - | - | 291 W |
Vf Forward Voltage | - | - | 1.8 V |
Vr Reverse Voltage | - | - | 1.2 kV |
If Forward Current | - | - | 30 A |
Vrrm Repetitive Reverse Voltage | - | - | 1.2 kV |
Ifsm Forward Surge Current | - | - | 330 A |