PartNumber | APT56M60B2 | APT56M50L | APT56M50B2 |
Description | MOSFET FG, MOSFET, 600V, TO-247 T-MAX | MOSFET FG, MOSFET, 500V, TO-264 | MOSFET FG, MOSFET, 500V, TO-247 T-MAX |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | T-MAX-3 | TO-264-3 | T-MAX-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 500 V |
Id Continuous Drain Current | 60 A | 56 A | 56 A |
Rds On Drain Source Resistance | 90 mOhms | 85 mOhms | 85 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 280 nC | 220 nC | 220 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.040 kW | 780 W | 780 W |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | POWER MOS 8 | POWER MOS 8 | POWER MOS 8 |
Packaging | Tube | Tube | Tube |
Height | 5.31 mm | 5.21 mm | 5.31 mm |
Length | 21.46 mm | 26.49 mm | 21.46 mm |
Width | 16.26 mm | 20.5 mm | 16.26 mm |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Forward Transconductance Min | 55 S | 43 S | 43 S |
Fall Time | 60 ns | 33 ns | 33 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 75 ns | 45 ns | 45 ns |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 190 ns | 100 ns | 100 ns |
Typical Turn On Delay Time | 65 ns | 38 ns | 38 ns |
Unit Weight | - | 0.373904 oz | - |