APT58M

APT58M50JU3 vs APT58M50JU2 vs APT58M50JCU2

 
PartNumberAPT58M50JU3APT58M50JU2APT58M50JCU2
DescriptionDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - MosfetDiscrete Semiconductor Modules Power Module - SiC
ManufacturerMicrochipMicrochipMicrochip
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
RoHSYYY
ProductPower MOSFET Modules--
Vgs Gate Source Voltage30 V--
Mounting StyleScrew Mount--
Package / CaseSOT-227-4--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTubeTube
ConfigurationSingle--
Height9.6 mm--
Length38.2 mm--
Width25.4 mm--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Fall Time50 ns--
Id Continuous Drain Current58 A--
Pd Power Dissipation543 W--
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
Rds On Drain Source Resistance65 mOhms--
Rise Time70 ns--
Factory Pack Quantity111
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesDiscrete Semiconductor Modules
TradenamePOWER MOS 8, ISOTOP--
Typical Turn Off Delay Time155 ns--
Typical Turn On Delay Time60 ns--
Vds Drain Source Breakdown Voltage500 V--
Vgs th Gate Source Threshold Voltage3 V--
Unit Weight1.058219 oz--
Manufacturer Part # Description RFQ
Microchip / Microsemi
Microchip / Microsemi
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APT58M50JCU2 Discrete Semiconductor Modules Power Module - SiC
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