 |  | | |
| PartNumber | APT64GA90LD30 | APT64GA90B2D30 | APT64GA90B |
| Description | IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX | IGBT Transistors FG, IGBT, 900V, TO-247 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-264-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 900 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 117 A | - | - |
| Pd Power Dissipation | 500 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 117 A | - | - |
| Height | 5.21 mm | - | - |
| Length | 26.49 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 20.5 mm | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 117 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | POWER MOS 8 | - | - |
| Unit Weight | 0.373904 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT64GA90LD30 | IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 | |
| APT64GA90B2D30 | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX | ||
| APT64GA90B | IGBT Transistors FG, IGBT, 900V, TO-247 | ||
| APT64GA90LD30 | IGBT Transistors |