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| PartNumber | APT65GP60JDQ2 | APT65GP60L2DQ2G | APT65GP60B2G |
| Description | IGBT Modules FG, IGBT-COMBI, 600V, 65A, SOT-227 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-264 MAX, RoHS | IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.2 V | - | - |
| Continuous Collector Current at 25 C | 130 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 431 W | - | - |
| Package / Case | ISOTOP-4 | TO-247-3 | TO-247-3 |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Technology | - | Si | Si |
| Unit Weight | - | 1.340411 oz | 1.340411 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT65GP60JDQ2 | IGBT Modules FG, IGBT-COMBI, 600V, 65A, SOT-227 | |
| APT65GP60L2DQ2G | IGBT Transistors FG, IGBT-COMBI, 600V, TO-264 MAX, RoHS | ||
| APT65GP60B2G | IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHS | ||
| APT65GP60B2G | IGBT Transistors | ||
| APT65GP60L2DQ2G | Trans IGBT Chip N-CH 600V 198A 3-Pin(3+Tab) TO-264 MAX | ||
| APT65GP60JDF2 | New and Original | ||
| APT65GP60JDQ2 | Trans IGBT Chip N-CH 600V 130A 4-Pin SOT-227 - Rail/Tube (Alt: APT65GP60JDQ2) |