PartNumber | APT75GP120JDQ3 | APT75GP120J | APT75GP120B2G |
Description | IGBT Modules FG, IGBT-COMBI, 1200V, 75A, SOT-227 | IGBT Modules FG, IGBT, 1200V, 75A, SOT-227 | IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 3.3 V | 3.3 V | 3.3 V |
Continuous Collector Current at 25 C | 128 A | 128 A | 100 A |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Pd Power Dissipation | 543 W | 543 W | 1.042 kW |
Package / Case | SOT-227-4 | SOT-227-4 | T-Max-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Height | 9.6 mm | 9.6 mm | 5.31 mm |
Length | 38.2 mm | 38.2 mm | 21.46 mm |
Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - 55 C to + 150 C |
Width | 25.4 mm | 25.4 mm | 16.26 mm |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Through Hole |
Maximum Gate Emitter Voltage | 20 V | 20 V | 30 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | POWER MOS 7 IGBT, ISOTOP | POWER MOS 7 IGBT, ISOTOP | POWER MOS 7 IGBT |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Technology | - | - | Si |
Configuration | - | - | Single |
Continuous Collector Current Ic Max | - | - | 100 A |
Continuous Collector Current | - | - | 100 A |