PartNumber | APT85GR120L | APT8M100B | APT8DQ60KCTG |
Description | IGBT Modules FG, IGBT, 1200V, 85A, TO-264 | MOSFET FG, MOSFET, 1000V, TO-247 | DIODE ARRAY GP 600V 8A TO220 |
Manufacturer | Microchip | Microchip | - |
Product Category | IGBT Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
Collector Emitter Saturation Voltage | 3.5 V | - | - |
Continuous Collector Current at 25 C | 170 A | - | - |
Gate Emitter Leakage Current | 250 nA | - | - |
Pd Power Dissipation | 962 W | 290 W | - |
Package / Case | TO-264-3 | TO-247-3 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tube | Tube | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Mounting Style | Through Hole | Through Hole | - |
Maximum Gate Emitter Voltage | 30 V | - | - |
Product Type | IGBT Modules | MOSFET | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | IGBTs | MOSFETs | - |
Unit Weight | 0.352740 oz | 1.340411 oz | - |
Technology | - | Si | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 1 kV | - |
Id Continuous Drain Current | - | 8 A | - |
Rds On Drain Source Resistance | - | 1.53 Ohms | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 60 nC | - |
Channel Mode | - | Enhancement | - |
Tradename | - | POWER MOS 8 | - |
Height | - | 5.31 mm | - |
Length | - | 21.46 mm | - |
Width | - | 16.26 mm | - |
Forward Transconductance Min | - | 7.5 S | - |
Fall Time | - | 7.2 ns | - |
Rise Time | - | 7.8 ns | - |
Typical Turn Off Delay Time | - | 29 ns | - |
Typical Turn On Delay Time | - | 8.5 ns | - |