PartNumber | APT90DR160HJ | APT94N60L2C3G | APT94N65B2C3G |
Description | Discrete Semiconductor Modules Power Module - Diode | MOSFET FG, MOSFET, 600V, TO-264 MAX, RoHS | MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-264-3 | T-MAX-3 |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 650 V |
Id Continuous Drain Current | - | 94 A | 94 A |
Rds On Drain Source Resistance | - | 30 mOhms | 30 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 505 nC | 580 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 833 W | 833 W |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 5.21 mm | - |
Length | - | 26.49 mm | - |
Width | - | 20.5 mm | - |
Fall Time | - | 8 ns | 167 ns |
Rise Time | - | 27 ns | 59 ns |
Typical Turn Off Delay Time | - | 110 ns | 498 ns |
Typical Turn On Delay Time | - | 18 ns | 32 ns |
Unit Weight | - | 0.373904 oz | - |
Configuration | - | - | Dual |
Forward Transconductance Min | - | - | - |