PartNumber | APTGT35A120T1G | APTGT35H120T3G | APTGT35X120T3G |
Description | IGBT Modules Trench Field Stop 1200V 55A 208W | IGBT Modules DOR CC3052 | IGBT Modules CC3074 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Dual | Full Bridge | 3-Phase |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
Continuous Collector Current at 25 C | 55 A | 55 A | 55 A |
Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
Pd Power Dissipation | 208 W | 208 W | 208 W |
Package / Case | SP1-12 | SP3-32 | SP3-32 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | - | - |