PartNumber | APTGF200A120D3G | APTGF250A60D3G | APTGF200U120DG |
Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | POWER IGBT TRANSISTOR |
Manufacturer | Microchip | Microchip | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
Collector Emitter Saturation Voltage | 3.2 V | 1.95 V | - |
Continuous Collector Current at 25 C | 300 A | 400 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 1.4 kW | 1.25 kW | - |
Package / Case | D3-11 | D3-11 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | IGBTs | IGBTs | - |