![]() | ![]() | ![]() | |
| PartNumber | APTGL475A120D3G | APTGL40H120T1G | APTGL40X120T3G |
| Description | IGBT Modules CC7082 | IGBT Modules DOR CC8085 | IGBT Modules DOR CC3132 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Full Bridge | 3-Phase |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.8 V | 1.85 V | 1.85 V |
| Continuous Collector Current at 25 C | 610 A | 65 A | 65 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 2.08 kW | 220 W | 220 W |
| Package / Case | D3-11 | SP1-12 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 100 C | + 100 C |
| Packaging | Bulk | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 2.821917 oz | - |