PartNumber | APTGLQ100A65T1G | APTGLQ100A120T3AG | APTGLQ100A120TG |
Description | IGBT Modules CC8101 | IGBT Modules CC3165 | IGBT Modules CC4143 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Dual | Dual | Dual |
Collector Emitter Voltage VCEO Max | 650 V | 1.2 kV | 1200 V |
Collector Emitter Saturation Voltage | 1.85 V | 2.05 V | 2.05 V |
Continuous Collector Current at 25 C | 135 A | 185 A | 170 A |
Gate Emitter Leakage Current | 150 nA | 150 nA | 150 nA |
Pd Power Dissipation | 350 W | 650 W | 520 W |
Package / Case | SP1-12 | SP3-32 | SP4 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 125 C | + 100 C | + 125 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | - | 3.880136 oz |
Technology | - | - | - |