PartNumber | APTGT100A120T3AG | APTGT100A120D1G | APTGT100A1202G |
Description | IGBT Modules DOR CC3135 | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | - | IGBT Silicon Modules |
Configuration | Dual | Dual | Dual |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
Continuous Collector Current at 25 C | 140 A | 150 A | 140 A |
Gate Emitter Leakage Current | 400 nA | 300 nA | 400 nA |
Pd Power Dissipation | 595 W | 520 W | 480 W |
Package / Case | SP3-32 | D1-7 | SP2-18 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 125 C | + 100 C |
Packaging | Tube | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 50 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Technology | - | - | Si |
Unit Weight | - | - | 2.821917 oz |