PartNumber | APTGT100DA60T1G | APTGT100DA120T1G | APTGT100DH120TG |
Description | IGBT Modules CC8064 | IGBT Modules DOR CC8079 | IGBT Modules DOR CC4080 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Single | Dual |
Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 1.5 V | 1.7 V | 1.7 V |
Continuous Collector Current at 25 C | 150 A | 140 A | 140 A |
Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
Pd Power Dissipation | 340 W | 480 W | 480 W |
Package / Case | SP1-12 | SP1-12 | SP4 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | 2.821917 oz | 3.880136 oz |