 | | | |
| PartNumber | APTGT200A120G | APTGT200A120D3G | APTGT200A170D3G |
| Description | IGBT Modules CC6105 | IGBT Modules DOR CC7014 | IGBT Modules DOR CC7088 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 2 V |
| Continuous Collector Current at 25 C | 280 A | 300 A | 310 A |
| Gate Emitter Leakage Current | 500 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 890 W | 1.05 kW | 1.25 kW |
| Package / Case | SP6 | D3-11 | D3-11 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 125 C | + 125 C |
| Packaging | Tube | Bulk | Bulk |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT200A120G | IGBT Modules CC6105 | |
| APTGT200A120D3G | IGBT Modules DOR CC7014 | ||
| APTGT200A170D3G | IGBT Modules DOR CC7088 | ||
| APTGT200A120D3G | Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTGT200A120D3G) | ||
| APTGT200A120G | Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP-6 | ||
| APTGT200A120D3 | New and Original |