PartNumber | APTGT300SK120G | APTGT300SK170G | APTGT300SK170D3G |
Description | IGBT Modules DOR CC6120 | IGBT Modules CC6132 | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.7 kV | 1.7 kV |
Collector Emitter Saturation Voltage | 1.7 V | 2 V | 2 V |
Continuous Collector Current at 25 C | 420 A | 400 A | 400 A |
Gate Emitter Leakage Current | 600 nA | 600 nA | 400 nA |
Pd Power Dissipation | 1.38 kW | 1.66 kW | 1.47 kW |
Package / Case | SP6 | SP6 | D3-11 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 125 C |
Packaging | Tube | Tube | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 3.880136 oz | 3.880136 oz | - |
Technology | - | - | Si |