PartNumber | APTM50H14FT3G | APTM50H15FT1G | APTM50H10FT3G |
Description | Discrete Semiconductor Modules Power Module - Mosfet | Discrete Semiconductor Modules Power Module - Mosfet | Discrete Semiconductor Modules Power Module - Mosfet |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Mounting Style | Screw Mount | Through Hole | - |
Package / Case | SP-32 | SP1-12 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 100 C | - |
Packaging | Tube | Tube | Tube |
Configuration | Single | Quad | - |
Height | 11.5 mm | - | - |
Length | 73.4 mm | - | - |
Width | 40.8 mm | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | N-Channel | - |
Fall Time | 41 ns | 26 ns | - |
Id Continuous Drain Current | 26 A | 25 A | - |
Pd Power Dissipation | 208 W | 208 W | - |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
Rds On Drain Source Resistance | 140 mOhms | 130 mOhms | - |
Rise Time | 17 ns | 35 ns | - |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
Tradename | POWER MOS 7 | - | - |
Typical Turn Off Delay Time | 50 ns | 80 ns | - |
Typical Turn On Delay Time | 10 ns | 29 ns | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Type | - | Full Bridge | - |
Unit Weight | - | 2.821917 oz | - |