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| PartNumber | APTM50H14FT3G | APTM50H15FT1G | APTM50H10FT3G |
| Description | Discrete Semiconductor Modules Power Module - Mosfet | Discrete Semiconductor Modules Power Module - Mosfet | Discrete Semiconductor Modules Power Module - Mosfet |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | Power MOSFET Modules | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Mounting Style | Screw Mount | Through Hole | - |
| Package / Case | SP-32 | SP1-12 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 100 C | - |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Quad | - |
| Height | 11.5 mm | - | - |
| Length | 73.4 mm | - | - |
| Width | 40.8 mm | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 41 ns | 26 ns | - |
| Id Continuous Drain Current | 26 A | 25 A | - |
| Pd Power Dissipation | 208 W | 208 W | - |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
| Rds On Drain Source Resistance | 140 mOhms | 130 mOhms | - |
| Rise Time | 17 ns | 35 ns | - |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | Discrete Semiconductor Modules |
| Tradename | POWER MOS 7 | - | - |
| Typical Turn Off Delay Time | 50 ns | 80 ns | - |
| Typical Turn On Delay Time | 10 ns | 29 ns | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Type | - | Full Bridge | - |
| Unit Weight | - | 2.821917 oz | - |