AS6C101

AS6C1016-55ZIN vs AS6C1016-55BINTR vs AS6C1016-55BIN

 
PartNumberAS6C1016-55ZINAS6C1016-55BINTRAS6C1016-55BIN
DescriptionSRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAMSRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
ManufacturerAlliance MemoryAlliance MemoryAlliance Memory, Inc.
Product CategorySRAMSRAMMemory
RoHSYY-
Memory Size1 Mbit1 Mbit1M (64K x 16)
Organization64 k x 1664 k x 16-
Access Time55 ns55 ns-
Interface TypeParallelParallel-
Supply Voltage Max5.5 V5.5 V-
Supply Voltage Min2.7 V2.7 V-
Supply Current Max60 mA60 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-44TFBGA-48-
PackagingTrayReelTray Alternate Packaging
Memory TypeSRAMSRAMSRAM - Asynchronous
SeriesAS6C1016AS6C1016-
TypeAsynchronousAsynchronous-
BrandAlliance MemoryAlliance Memory-
Number of Ports1--
Moisture SensitiveYesYes-
Product TypeSRAMSRAM-
Factory Pack Quantity1352000-
SubcategoryMemory & Data StorageMemory & Data Storage-
Package Case--48-TFBGA
Operating Temperature---40°C ~ 85°C (TA)
Interface--Parallel
Voltage Supply--2.7 V ~ 5.5 V
Supplier Device Package--48-TFBGA (6x8)
Speed--55ns
Format Memory--RAM
Manufacturer Part # Description RFQ
Alliance Memory
Alliance Memory
AS6C1016-55ZIN SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BINTR SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16
AS6C1016-55ZINTR SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BINTR SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55ZINTR SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55BIN SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
AS6C1016-55ZIN SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
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