PartNumber | ATF-50189-TR2 | ATF-50189-TR1 | ATF-50189-TR1G |
Description | RF JFET Transistors Transistor GaAs Hi gh Linearity | RF JFET Transistors Transistor GaAs High Linearity | |
Manufacturer | Broadcom Limited | AVAGO | - |
Product Category | RF JFET Transistors | RF FETs | - |
RoHS | Y | - | - |
Transistor Type | EpHEMT | EpHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 15.5 dB | 15.5 dB | - |
Vds Drain Source Breakdown Voltage | 7 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 0.8 V | - | - |
Id Continuous Drain Current | 1 A | - | - |
Maximum Drain Gate Voltage | - 5 V to + 1 V | - 5 V to + 1 V | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.25 W | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-89 | - | - |
Packaging | Reel | Reel | - |
Configuration | Single | Single | - |
Operating Frequency | 2 GHz | 2 GHz | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 2294 mmho | - | - |
NF Noise Figure | 1.1 dB | - | - |
P1dB Compression Point | 29 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.004603 oz | 0.004603 oz | - |
Package Case | - | SOT-89 | - |
Pd Power Dissipation | - | 2.25 W | - |
Id Continuous Drain Current | - | 1 A | - |
Vds Drain Source Breakdown Voltage | - | 7 V | - |
Forward Transconductance Min | - | 2294 mmho | - |
Vgs Gate Source Breakdown Voltage | - | - 5 V to 0.8 V | - |
NF Noise Figure | - | 1.1 dB | - |
P1dB Compression Point | - | 29 dBm | - |