PartNumber | ATF-54143-TR1G | ATF-54143-BLKG | ATF-54143-TR1 |
Description | RF JFET Transistors Transistor GaAs Single Voltage | RF JFET Transistors Transistor GaAs Single Voltage | FET RF 5V 2GHZ SOT-343 |
Manufacturer | Broadcom Limited | AVAGO | - |
Product Category | RF JFET Transistors | RF FETs | - |
RoHS | Y | - | - |
Transistor Type | EpHEMT | EpHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 16.6 dB | 16.6 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 5 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
Id Continuous Drain Current | 120 mA | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 725 mW | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-343 | - | - |
Packaging | Reel | Bulk | - |
Configuration | Single Dual Source | Single Dual Source | - |
Operating Frequency | 2 GHz | 2 GHz | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 410 mmho | - | - |
NF Noise Figure | 0.5 dB | - | - |
P1dB Compression Point | 20.4 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Package Case | - | SOT-343 | - |
Pd Power Dissipation | - | 725 mW | - |
Id Continuous Drain Current | - | 120 mA | - |
Vds Drain Source Breakdown Voltage | - | 5 V | - |
Forward Transconductance Min | - | 410 mmho | - |
Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
NF Noise Figure | - | 0.5 dB | - |
P1dB Compression Point | - | 20.4 dBm | - |