PartNumber | ATP101-TL-H | ATP101 | ATP101-TL-H-T |
Description | MOSFET SWITCHING DEVICE | ||
Manufacturer | ON Semiconductor | ON | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | ATPAK-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 25 A | - | - |
Rds On Drain Source Resistance | 30 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 30 W | - | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Series | ATP101 | ATP101 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 30 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 25 A | - |
Vds Drain Source Breakdown Voltage | - | - 30 V | - |
Rds On Drain Source Resistance | - | 30 mOhms | - |