ATP102

ATP102-TL-H vs ATP102 vs ATP102TLH

 
PartNumberATP102-TL-HATP102ATP102TLH
DescriptionMOSFET SWITCHING DEVICE
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseATPAK-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance18.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
PackagingReel--
SeriesATP102--
Transistor Type1 P-Channel--
BrandON Semiconductor--
Forward Transconductance Min29 S--
Fall Time185 ns--
Product TypeMOSFET--
Rise Time135 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time135 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ATP102-TL-H MOSFET SWITCHING DEVICE
ATP102 New and Original
ATP102TLH New and Original
ON Semiconductor
ON Semiconductor
ATP102-TL-H RF Bipolar Transistors MOSFET SWITCHING DEVICE
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