ATP302-T

ATP302-TL-H vs ATP302-TL vs ATP302-TL-H-T1

 
PartNumberATP302-TL-HATP302-TLATP302-TL-H-T1
DescriptionMOSFET POWER MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseATPAK-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge115 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesATP302--
Transistor Type1 P-Channel--
BrandON Semiconductor--
Fall Time500 ns--
Product TypeMOSFET--
Rise Time430 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time420 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ATP302-TL-H MOSFET POWER MOSFET
ATP302-TL New and Original
ATP302-TL-H-T1 New and Original
ON Semiconductor
ON Semiconductor
ATP302-TL-H RF Bipolar Transistors MOSFET POWER MOSFET
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