| PartNumber | AUIRF1405ZS | AUIRF1405ZL | AUIRF1405ZS-7P |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | MOSFET N-CHANNEL 55 / 60 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-263-3 | TO-262-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | 55 V |
| Id Continuous Drain Current | 150 A | 150 A | 150 A |
| Rds On Drain Source Resistance | 5.3 mOhms | 5.3 mOhms | 3.7 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 120 nC | 120 nC | 230 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Pd Power Dissipation | 230 W | 230 W | 230 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Tube | Tube |
| Height | 4.4 mm | 9.45 mm | 4.4 mm |
| Length | 10 mm | 10.2 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 4.5 mm | 9.25 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Fall Time | 82 ns | 82 ns | 130 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 110 ns | 110 ns | 140 ns |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 48 ns | 170 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 16 ns |
| Part # Aliases | SP001519512 | SP001516578 | SP001518538 |
| Unit Weight | 0.139332 oz | 0.084199 oz | 0.077603 oz |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Maximum Operating Temperature | - | - | + 175 C |
| Forward Transconductance Min | - | - | 108 S |