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| PartNumber | AUIRF2804STRL | AUIRF2804STRL7P | AUIRF2804STRR7P |
| Description | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 44 A | 320 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 1.6 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 330 W | - |
| Configuration | Single | Single | Single Quint Source |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 130 ns | 100 ns | 100 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | 150 ns | 150 ns |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 130 ns | 110 ns | 110 ns |
| Typical Turn On Delay Time | 13 ns | 17 ns | 17 ns |
| Part # Aliases | SP001521004 | SP001519258 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 170 nC | - |
| Forward Transconductance Min | - | 220 S | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 330 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 320 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 1.6 mOhms |
| Qg Gate Charge | - | - | 170 nC |
| Forward Transconductance Min | - | - | 220 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRF2804STRL | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | |
| AUIRF2804STRL7P | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRR7P | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRL7P | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRL | RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | ||
| AUIRF2804STRLTRLPBF | New and Original | ||
| AUIRF2804STRR | AUTOMOTIVE MOSFET 40V, 280A, 2.3 MOHM, 160 NC QG, D2PAK |