AUIRF2903ZS

AUIRF2903ZSTRL vs AUIRF2903ZS

 
PartNumberAUIRF2903ZSTRLAUIRF2903ZS
DescriptionMOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhmsMOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current235 A235 A
Rds On Drain Source Resistance2.4 mOhms2.4 mOhms
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge160 nC160 nC
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation231 W231 W
ConfigurationSingleSingle
Channel ModeEnhancement-
QualificationAEC-Q101AEC-Q101
PackagingReelTube
Height4.4 mm4.4 mm
Length10 mm10 mm
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min120 S-
Fall Time37 ns-
Product TypeMOSFETMOSFET
Rise Time100 ns-
Factory Pack Quantity8001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time48 ns-
Typical Turn On Delay Time24 ns-
Part # AliasesSP001521122SP001518498
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
AUIRF2903ZSTRL MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZS MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZS RF Bipolar Transistors MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZSTRL MOSFET N-CH 30V 235A D2PAK
AUIRF2903ZSTRR RF Bipolar Transistors MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZSPBF New and Original
AUIRF2903ZSTRLPBF New and Original
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