PartNumber | AUIRF2907ZS7PTL | AUIRF2907Z | AUIRF2907ZS-7P |
Description | MOSFET AUTO 75V 1 N-CH HEXFET 3.8mOhms | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | RF Bipolar Transistors MOSFET AUTO 75V 1 N-CH HEXFET 3.8mOhms |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 44 A | 170 A | - |
Rds On Drain Source Resistance | 3.8 mOhms | 4.5 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 300 W | 300 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Tube | Tube |
Height | 4.4 mm | 15.65 mm | - |
Length | 10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 4.4 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 44 ns | 100 ns | 44 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 90 ns | 140 ns | 90 ns |
Factory Pack Quantity | 800 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 92 ns | 97 ns | 92 ns |
Typical Turn On Delay Time | 21 ns | 19 ns | 21 ns |
Part # Aliases | SP001516558 | SP001515818 | - |
Unit Weight | 0.139332 oz | 0.211644 oz | 0.139332 oz |
Qg Gate Charge | - | 180 nC | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 300 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 180 A |
Vds Drain Source Breakdown Voltage | - | - | 75 V |
Rds On Drain Source Resistance | - | - | 3.8 mOhms |
Qg Gate Charge | - | - | 170 nC |