 | |  | |
| PartNumber | AUIRF3710ZS | AUIRF3710ZSTRL | AUIRF3710Z |
| Description | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | Darlington Transistors MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 59 A | 44 A | - |
| Rds On Drain Source Resistance | 18 mOhms | 18 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 82 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Pd Power Dissipation | 160 W | 160 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Reel | Tube |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 56 ns | 56 ns | 56 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 77 ns | 77 ns | 77 ns |
| Factory Pack Quantity | 1000 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 41 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 17 ns | 17 ns | 17 ns |
| Part # Aliases | SP001522564 | SP001519476 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.211644 oz |
| Maximum Operating Temperature | - | + 175 C | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 160 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 59 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 108 mOhms |
| Qg Gate Charge | - | - | 82 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF3710ZS | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | |
| AUIRF3710ZSTRL | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | ||
Infineon Technologies |
AUIRF3710Z | Darlington Transistors MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms | |
| AUIRF3710ZSTRL | IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | ||
| AUIRF3710ZS | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | ||
| AUIRF3710ZL | New and Original | ||
| AUIRF3710ZPBF,AUIRF3710Z | New and Original | ||
| AUIRF3710ZSTRLPBF | New and Original | ||
| AUIRF3710ZSTRR | AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK |