 | | |
| PartNumber | AUIRF3710ZS | AUIRF3710ZSTRL |
| Description | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 59 A | 44 A |
| Rds On Drain Source Resistance | 18 mOhms | 18 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 82 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Pd Power Dissipation | 160 W | 160 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon / IR | Infineon / IR |
| Fall Time | 56 ns | 56 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 77 ns | 77 ns |
| Factory Pack Quantity | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 41 ns |
| Typical Turn On Delay Time | 17 ns | 17 ns |
| Part # Aliases | SP001522564 | SP001519476 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Maximum Operating Temperature | - | + 175 C |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF3710ZS | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | |
| AUIRF3710ZSTRL | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | ||
Infineon Technologies |
AUIRF3710ZSTRL | IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | |
| AUIRF3710ZS | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | ||
| AUIRF3710ZSTRLPBF | New and Original | ||
| AUIRF3710ZSTRR | AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK |