AUIRFR120ZT

AUIRFR120ZTRL vs AUIRFR120ZTR vs AUIRFR120ZTRPBF

 
PartNumberAUIRFR120ZTRLAUIRFR120ZTRAUIRFR120ZTRPBF
DescriptionMOSFET AUTO 100V 1 N-CH HEXFET 190mOhmsMOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation35 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Fall Time23 ns23 ns-
Product TypeMOSFET--
Rise Time26 ns26 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time8.3 ns8.3 ns-
Part # AliasesSP001520338--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-35 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-3.1 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-190 mOhms-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
AUIRFR120ZTRL MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
Infineon Technologies
Infineon Technologies
AUIRFR120ZTRL RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTRR RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTR MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTRPBF New and Original
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