AUIRFR120ZTR

AUIRFR120ZTRL vs AUIRFR120ZTRR vs AUIRFR120ZTR

 
PartNumberAUIRFR120ZTRLAUIRFR120ZTRRAUIRFR120ZTR
DescriptionMOSFET AUTO 100V 1 N-CH HEXFET 190mOhmsRF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhmsMOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
ManufacturerInfineonInternational RectifierInternational Rectifier
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current3.1 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation35 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time23 ns23 ns23 ns
Product TypeMOSFET--
Rise Time26 ns26 ns26 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns27 ns27 ns
Typical Turn On Delay Time8.3 ns8.3 ns8.3 ns
Part # AliasesSP001520338--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-35 W35 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-3.1 A3.1 A
Vds Drain Source Breakdown Voltage-100 V100 V
Rds On Drain Source Resistance-190 mOhms190 mOhms
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
AUIRFR120ZTRL MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
Infineon Technologies
Infineon Technologies
AUIRFR120ZTRL RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTRR RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTR MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms
AUIRFR120ZTRPBF New and Original
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