AUIRG4P

AUIRG4PH50S vs AUIRG4PC40S-E vs AUIRG4PH50S-205

 
PartNumberAUIRG4PH50SAUIRG4PC40S-EAUIRG4PH50S-205
DescriptionIGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBTIGBT Transistors DISCRETESIGBT 1200V TO247-3
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247AD-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV600 V-
Collector Emitter Saturation Voltage1.7 V1.32 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C57 A60 A-
Pd Power Dissipation200 W160 W-
Minimum Operating Temperature- 55 C- 55 C-
QualificationAEC-Q101AEC-Q101-
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon TechnologiesInfineon / IR-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity400400-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001512028SP001511242-
Unit Weight1.340411 oz--
Maximum Operating Temperature-+ 150 C-
Continuous Collector Current Ic Max-60 A-
Gate Emitter Leakage Current-+/- 100 nA-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
AUIRG4PH50S IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
AUIRG4PH50S IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
AUIRG4PH50S-205 IGBT 1200V TO247-3
AUIRG4PC40S-E IGBT 600V 60A 160W TO247
Infineon / IR
Infineon / IR
AUIRG4PC40S-E IGBT Transistors DISCRETES
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