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| PartNumber | BC55-10PA,115 | BC55-10PASX |
| Description | Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors | Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020-3 | DFN-2020D-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V |
| Collector Base Voltage VCBO | 60 V | 60 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Maximum DC Collector Current | 2 A | 1 A |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 250 at 150 mA, 2 V | 250 at 150 mA, 2 V |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | 1 A | - |
| DC Collector/Base Gain hfe Min | 63 at 150 mA, 2 V | 63 at 150 mA, 2 V |
| Pd Power Dissipation | 420 mW | 1.65 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000261 oz | - |
| Technology | - | Si |
| Collector Emitter Saturation Voltage | - | 500 mV |
| Gain Bandwidth Product fT | - | 180 MHz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BC55-10PA,115 | Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors | |
| BC55-10PASX | Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans | ||
| BC55-10PA,115 | Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors | ||
| BC55-10PASX | Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans | ||
| BC55-10PA115 | Now Nexperia BC55-10PA - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HUSON3 |