BC807-40LT3

BC807-40LT3G vs BC807-40LT3 vs BC807-40LT3G,MAX3237ECAI

 
PartNumberBC807-40LT3GBC807-40LT3BC807-40LT3G,MAX3237ECAI
DescriptionBipolar Transistors - BJT 500mA 50V PNPBipolar Transistors - BJT 500mA 50V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.7 V- 0.7 V-
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC807-40LBC807-40L-
Height0.94 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.5 A- 0.5 A-
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.050717 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Power Max-300mW-
Transistor Type-PNP-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-250 @ 100mA, 1V-
Vce Saturation Max Ib Ic-700mV @ 50mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-225 mW-
Collector Emitter Voltage VCEO Max-- 45 V-
Collector Base Voltage VCBO-- 50 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-250-
Manufacturer Part # Description RFQ
BC807-40LT3G Bipolar Transistors - BJT 500mA 50V PNP
BC807-40LT3 Bipolar Transistors - BJT 500mA 50V PNP
BC807-40LT3G,MAX3237ECAI New and Original
ON Semiconductor
ON Semiconductor
BC807-40LT3G Bipolar Transistors - BJT 500mA 50V PNP
Top